Voltage memory digital pre-distortion circuit

ABSTRACT

An envelope tracking (ET) amplifier circuit is provided. The voltage mDPD circuit is provided in an ET amplifier circuit and configured to determine a voltage deviation relative to an ET modulated target voltage signal, execute an mDPD polynomial in one or more iterations to extract an mDPD coefficient(s), and adjust a time-variant target voltage envelope of the ET modulated target voltage signal based on the mDPD coefficient(s) extracted in each of the mDPD iterations to reduce the voltage deviation to a predefined threshold. By reducing the voltage deviation in the ET modulated voltage, it is possible improve linearity (e.g., gain linearity) of the ET amplifier circuit, which can lead to reduced power consumption and improved radio frequency (RF) performance.

RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional PatentApplication Ser. No. 62/533,193, filed on Jul. 17, 2017, which isincorporated herein by reference in its entirety.

FIELD OF THE DISCLOSURE

The technology of the disclosure relates generally to envelope tracking(ET) power management in wireless communication devices.

BACKGROUND

Mobile communication devices have become increasingly common in currentsociety. The prevalence of these mobile communication devices is drivenin part by the many functions that are now enabled on such devices.Increased processing capabilities in such devices means that mobilecommunication devices have evolved from being pure communication toolsinto sophisticated mobile multimedia centers that enable enhanced userexperiences.

The redefined user experience requires higher data rates offered byadvanced wireless communication technologies, such as long-termevolution (LTE) and fifth-generation new radio (5G-NR). To achieve thehigher data rates in mobile communication devices, power amplifiers(PAs) may be employed to increase output power of radio frequency (RF)signals (e.g., maintaining sufficient energy per bit) communicated bymobile communication devices.

PAs are inherently nonlinear. The nonlinearity generates spectralre-growth that can lead to adjacent channel interference and/or in-banddistortion. As a result, the RF signals outputted by the PAs may violateregulatory out-of-band emission requirements and/or suffer an increasedbit-error-rate (BER). To help reduce nonlinearity, the PAs may beconfigured with a relatively large back-off so as to operate within alinear portion of a PA's operating curve. However, the RF signalstransmitted in LTE and 5G-NR systems typically have higherpeak-to-average ratios (PARs). In this regard, the back-off needs to bewell below maximum saturated output power of the PA to handle sporadichigh peaks of the RF signals. As a result, the PAs may be forced tooperate with very low efficiency (e.g., less than 10%), with a largeportion of the PA power (e.g., 90%) being turned into thermal heat.

Envelope tracking is a power management technology designed to improveefficiency levels of PAs to help reduce power consumption and thermaldissipation in mobile communication devices. As the name suggests,envelope tracking employs a system that keeps track of the amplitudeenvelope of the RF signals communicated by mobile communication devices.The envelope tracking system needs to constantly adjust supply voltageapplied to the PAs to ensure that the PAs are operating at a higherefficiency.

SUMMARY

Aspects disclosed in the detailed description include a voltage memorydigital pre-distortion (mDPD) circuit. In examples discussed herein, thevoltage mDPD circuit is provided in an envelope tracking (ET) amplifiercircuit to help reduce a voltage deviation in an ET modulated voltagethat is used by an amplifier circuit(s) for amplifying a radio frequency(RF) signal. The voltage mDPD circuit is configured to determine thevoltage deviation relative to an ET modulated target voltage signal andexecute an mDPD polynomial in one or more iterations to extract an mDPDcoefficient(s). Accordingly, the voltage mDPD circuit adjusts atime-variant target voltage envelope of the ET modulated target voltagesignal based on the mDPD coefficient(s) extracted in each of the mDPDiterations to reduce the voltage deviation to a predefined threshold. Byreducing the voltage deviation in the ET modulated voltage, it ispossible to improve linearity (e.g., gain linearity) of the ET amplifiercircuit, which can lead to reduced power consumption and improved RFperformance.

In one aspect, an ET amplifier circuit is provided. The ET amplifiercircuit includes at least one amplifier circuit configured to amplify anRF signal based on an ET modulated voltage. The ET amplifier circuitalso includes ET tracker circuitry configured to receive an ET modulatedtarget voltage signal comprising a time-variant target voltage envelopeand generate the ET modulated voltage comprising a time-variant voltageenvelope tracking the time-variant target voltage envelope. The ETamplifier circuit also includes a voltage input path configured toprovide the ET modulated target voltage signal to the ET trackercircuitry. The voltage input path comprises a voltage mDPD circuit. Thevoltage mDPD circuit is configured to determine a voltage deviation ofthe ET modulated voltage relative to the ET modulated target voltagesignal. The voltage mDPD circuit is also configured to execute an mDPDpolynomial in one or more iterations. Each of the one or more iterationsis selectively configured to extract at least one mDPD coefficient. Thevoltage mDPD circuit is also configured to adjust the time-varianttarget voltage envelope based on the at least one mDPD coefficientextracted in each of the one or more iterations to reduce the voltagedeviation to a predefined threshold.

In another aspect, a method for performing voltage mDPD in an ETamplifier circuit is provided. The method includes determining a voltagedeviation of an ET modulated voltage relative to an ET modulated targetvoltage signal. The ET modulated target voltage signal includes atime-variant target voltage envelope and the ET modulated voltageincludes a time-variant voltage envelope tracking the time-varianttarget voltage envelope. The method also includes executing an mDPDpolynomial in one or more iterations. Each of the one or more iterationsis selectively configured to extract at least one mDPD coefficient. Themethod also includes adjusting the time-variant target voltage envelopebased on the at least one mDPD coefficient extracted in each of the oneor more iterations to reduce the voltage deviation to a predefinedthreshold.

Those skilled in the art will appreciate the scope of the disclosure andrealize additional aspects thereof after reading the following detaileddescription in association with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings incorporated in and forming a part of thisspecification illustrate several aspects of the disclosure and, togetherwith the description, serve to explain the principles of the disclosure.

FIG. 1A is a schematic diagram of an exemplary power amplifier (PA);

FIG. 1B is a PA operation curve providing an exemplary illustration oflinear behavior of the PA of FIG. 1A in a linearity region;

FIG. 1C is a PA operation curve providing an exemplary illustration ofnonlinear behavior of the PA of FIG. 1A in a nonlinearity region;

FIG. 1D is a schematic diagram of an exemplary digital signal processorconfigured to perform digital pre-distortion (DPD) to improve linearityof the PA of FIG. 1A;

FIG. 1E is a PA operation curve providing an exemplary illustration oflinear behavior of the PA of FIG. 1A in an expended linearity region asa result of the DPD performed by the digital signal processor of FIG.1D;

FIG. 2A is a schematic diagram of an exemplary envelope tracking (ET)amplifier circuit including a signal memory digital pre-distortion(mDPD) circuit provided in a signal input path and configured to performmDPD on a digital baseband signal to help reduce memory nonlinearity ofat least one amplifier circuit;

FIG. 2B is a schematic diagram showing that an output impedance of an ETtracker circuitry in the ET amplifier circuit of FIG. 2A can be modeledby an output inductance;

FIG. 3 is a schematic diagram of an exemplary ET amplifier circuitconfigured to support voltage mDPD according to one embodiment of thepresent disclosure;

FIG. 4 is a flowchart of an exemplary process that can be employed by avoltage mDPD circuit in the ET amplifier circuit of FIG. 3 to minimizevoltage deviation in an ET modulated voltage; and

FIGS. 5A-5C are graphs providing exemplary illustrations of performanceimprovements of the ET amplifier circuit of FIG. 3.

DETAILED DESCRIPTION

The embodiments set forth below represent the necessary information toenable those skilled in the art to practice the embodiments andillustrate the best mode of practicing the embodiments. Upon reading thefollowing description in light of the accompanying drawing figures,those skilled in the art will understand the concepts of the disclosureand will recognize applications of these concepts not particularlyaddressed herein. It should be understood that these concepts andapplications fall within the scope of the disclosure and theaccompanying claims.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another. For example, a first element could be termed asecond element, and, similarly, a second element could be termed a firstelement, without departing from the scope of the present disclosure. Asused herein, the term “and/or” includes any and all combinations of oneor more of the associated listed items.

It will be understood that when an element such as a layer, region, orsubstrate is referred to as being “on” or extending “onto” anotherelement, it can be directly on or extend directly onto the other elementor intervening elements may also be present. In contrast, when anelement is referred to as being “directly on” or extending “directlyonto” another element, there are no intervening elements present.Likewise, it will be understood that when an element such as a layer,region, or substrate is referred to as being “over” or extending “over”another element, it can be directly over or extend directly over theother element or intervening elements may also be present. In contrast,when an element is referred to as being “directly over” or extending“directly over” another element, there are no intervening elementspresent. It will also be understood that when an element is referred toas being “connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present.

Relative terms such as “below” or “above” or “upper” or “lower” or“horizontal” or “vertical” may be used herein to describe a relationshipof one element, layer, or region to another element, layer, or region asillustrated in the Figures. It will be understood that these terms andthose discussed above are intended to encompass different orientationsof the device in addition to the orientation depicted in the Figures.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the disclosure.As used herein, the singular forms “a,” “an,” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises,”“comprising,” “includes,” and/or “including” when used herein specifythe presence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure belongs. It willbe further understood that terms used herein should be interpreted ashaving a meaning that is consistent with their meaning in the context ofthis specification and the relevant art and will not be interpreted inan idealized or overly formal sense unless expressly so defined herein.

Aspects disclosed in the detailed description include a voltage memorydigital pre-distortion (mDPD) circuit. In examples discussed herein, thevoltage mDPD circuit is provided in an envelope tracking (ET) amplifiercircuit to help reduce a voltage deviation in an ET modulated voltagethat is used by an amplifier circuit(s) for amplifying a radio frequency(RF) signal. The voltage mDPD circuit is configured to determine thevoltage deviation relative to an ET modulated target voltage signal andexecute an mDPD polynomial in one or more iterations to extract an mDPDcoefficient(s). Accordingly, the voltage mDPD circuit adjusts atime-variant target voltage envelope of the ET modulated target voltagesignal based on the mDPD coefficient(s) extracted in each of the mDPDiterations to reduce the voltage deviation to a predefined threshold. Byreducing the voltage deviation in the ET modulated voltage, it ispossible to improve linearity (e.g., gain linearity) of the ET amplifiercircuit, which can lead to reduced power consumption and improved RFperformance.

Before discussing the voltage mDPD circuit of the present disclosure, abrief overview of power amplifier memory effect and the mDPD principlefor overcoming the power amplifier memory effect is first provided withreference to FIGS. 1A-1E. A brief discussion of an ET amplifier circuitin which a voltage mDPD circuit can be provided to help improve ETvoltage linearity is then provided with reference to FIGS. 2A and 2B.The discussion of specific exemplary aspects of using a voltage mDPDcircuit to help improve ET voltage linearity in an ET amplifier circuitstarts below with reference to FIG. 3.

FIG. 1A is a schematic diagram of an exemplary power amplifier (PA) 10.The PA 10 is configured to receive an RF signal 12 at an input end 14and output the RF signal 12 at an output end 16. The RF signal 12received at the input end 14 has an input power P_(IN) and the RF signal12 outputted at the output end 16 has an output power P_(OUT).

FIG. 1B is a PA operation curve 18 providing an exemplary illustrationof linear behavior of the PA 10 of FIG. 1A in a linearity region 20.Common elements between FIGS. 1A and 1B are shown therein with commonelement numbers and will not be re-described herein.

When the PA 10 operates in the linearity region 20, the output powerP_(OUT) is linearly related to the input power P_(IN) according to alinear gain curve 22. In this regard, the output power P_(OUT) isdetermined by a gain (G) of the PA 10 (P_(OUT)=G×P_(IN)). Notably, theRF signal 12 is inherently associated with time-variant amplitudes,which is commonly defined by a peak-to-average ratio (PAR).

As a result, the RF signal 12 at the input end 14 is confined to atime-variant input amplitude envelope 24. Accordingly, the RF signal 12at the output end 16 is confined to a time-variant output amplitudeenvelope 26 that tracks the time-variant input amplitude envelope 24.

For the PA 10 to operate in the linearity region 20, the PA 10 can beconfigured to operate with a power back-off 28, which represents adifferential between a maximum output power P_(OUT) _(_) _(MAX) and asaturation power P_(SAT) of the PA 10. In this regard, as long as theoutput power P_(OUT) is below the maximum output power P_(OUT) _(_)_(MAX), the output power P_(OUT) is linearly proportional to the inputpower P_(IN) and the time-variant output amplitude envelope 26 trackslinearly (e.g., linearly proportional to) the time-variant inputamplitude envelope 24 over time.

However, when the PA 10 is provided in such advanced wirelesscommunication devices and/or systems as long-term evolution (LTE) andfifth-generation new radio (5G-NR), the output power P_(OUT) of the RFsignal 12 can increase significantly (e.g., ≥23 dBm). As a result, theRF signal 12 can be associated with an increased PAR. Accordingly, thetime-variant input amplitude envelope 24 and the time-variant outputamplitude envelope 26 can exhibit increased fluctuations over time.Unfortunately, the increased envelope fluctuation can cause the PA 10 tooperate outside the linearity region 20.

FIG. 1C is a PA operation curve 30 providing an exemplary illustrationof nonlinear behavior of the PA 10 of FIG. 1A in a nonlinearity region32. Common elements between FIGS. 1A, 1B, and 1C are shown therein withcommon element numbers and will not be re-described herein.

Notably, with increased peaks in the time-variant input amplitudeenvelope 24 and the time-variant output amplitude envelope 26, theoutput power P_(OUT) of the RF signal 12 needs to increase accordingly.Consequently, the output power P_(OUT) may exceed the maximum outputpower P_(OUT-MAX), thus causing the PA 10 to operate outside thelinearity region 20 in the nonlinearity region 32.

When the PA 10 operates in the nonlinearity region 32, the output powerP_(OUT) is no longer linearly related to the input power P_(IN) inaccordance with the linear gain curve 22. Instead, the output powerP_(OUT) may be compressed. In this regard, as the input power P_(IN)increases, the output power P_(OUT) would increase disproportionally(e.g., less than) to the increase of the input power P_(IN). As aresult, the RF signal 12 outputted by the PA 10 at the output end 16 mayhave one or more compressed peaks 34, thus causing the time-variantoutput amplitude envelope 26 to deviate from the time-variant inputamplitude envelope 24.

Digital pre-distortion (DPD) is a cost-effective linearization techniquecommonly employed to help improve linearity of the PA 10. DPD takesadvantages in digital signal processing and digital-to-analog (D/A)conversion. In this regard, FIG. 1D is a schematic diagram of anexemplary digital signal processor 36 configured to perform DPD toimprove linearity of the PA 10 of FIG. 1A. Common elements between FIGS.1A and 1D are shown therein with common element numbers and will not bere-described herein.

The digital signal processor 36 is coupled to the PA 10 and configuredto expand an amplitude peak(s) in a digital baseband signal 38. Adigital-to-analog converter (DAC) 40 converts the digital basebandsignal into the RF signal 12 with the expanded amplitude peak(s) andprovides the RF signal 12, with the expanded amplitude peaks, to the PA10. By expending the amplitude peak(s) of the RF signal 12, it ispossible to improve the linearity of the PA 10.

FIG. 1E is a PA operation curve 42 providing an exemplary illustrationof linear behavior of the PA 10 of FIG. 1A in an expended linearityregion 44 as a result of DPD performed by the digital signal processor36 of FIG. 1D. Common elements between FIGS. 1A, 1B, 1C, 1D, and 1E areshown therein with common element numbers and will not be re-describedherein.

As a result of performing the DPD by the digital signal processor 36,the PA 10 can be configured to operate according to an expanded lineargain curve 46 in the expended linearity region 44. Accordingly, thetime-variant output amplitude envelope 26 linearly tracks thetime-variant input amplitude envelope 24.

DPD can be implemented based on a memory-less DPD model or a memory DPDmodel. The memory-less DPD model, which may be implemented based on alook-up table (LUT), is typically employed to correct memory-lessnonlinearity of nonlinear circuitry, that is, a current output of thenonlinear circuitry depends only on current input of the nonlinearcircuitry. In contrast, the memory DPD (mDPD) model is commonly employedto correct memory nonlinearity of nonlinear circuitry, that is, acurrent output of the nonlinear circuitry depends not only on currentinput of the nonlinear circuitry, but also on past inputs of thenonlinear circuitry. Such phenomenon is known as memory effect. Thecause of the memory effect may be attributed to thermal constants ofactive components that are frequency dependent.

Given that the PA 10 employs such frequency dependent active components,the PA 10 exhibits the memory effect, especially when the RF signal 12includes a large number of resource blocks (RBs) transmitted in a highercarrier frequency (e.g., millimeter wave spectrum). As such, the mDPDmodel is often employed to help improve linearity in the PA 10.

The mDPD model is typically implemented based on an mDPD polynomial asdefined in equation (Eq. 1) below.y _(k) =h ₀+Σ_(n=1) ^(N)Σ_(d=0) ^(D) h _(n,d) ·|x _(k-d)|^(n-1) ·x_(k-d)  (Eq. 1)

In the equation (Eq. 1) above, x and y represent input and output of themDPD model, respectively. N, D, and h_(n,d) represent nonlinearityorder, memory order, and coefficient, respectively. The mDPD polynomialin the equation (Eq. 1) can be further represented by a generalizedmemory polynomial (GMP) as in equation (Eq. 2) below.y _(k) =h ₀+Σ_(n=1) ^(Na)Σ_(d=0) ^(Da1) a _(n,d1) ·|x _(k-d1)|^(n-1) ·x_(k-d1)+Σ_(n=1) ^(Nb)Σ_(d1=0) ^(Db1)Σ_(d2=0) ^(Db2) b _(n,d1,d2) ·|x_(k-d1-d2)|^(n-1) ·x _(k-d1)+Σ_(n=1) ^(Nc)Σ_(d1=0) ^(Dc1)Σ_(d2=0) ^(Dc2)c _(n,d1,d2) ·|x _(k-d1+d2)|^(n-1) ·x _(k-d1)  (Eq. 2)

The term Σ_(n=1) ^(Nb)Σ_(d1=0) ^(Db1)Σ_(d2=0)^(Db2)b_(n,d1,d2)*|x_(k-d1-d2)|^(n-1)*x_(k-d1) and the term Σ_(n=1)^(Nc)Σ_(d1=0) ^(Dc1)Σ_(d2=0)^(Db2)c_(n,d1,d2)*|x_(k-d1+d2)|^(n-1)*x_(k-d1) in the equation (Eq. 2)above represent an extra envelope lag term and an extra envelope leadterm, respectively. In the examples discussed herein, the GMP asexpressed in the equation (Eq. 2) is employed in an ET amplifier circuitto help reduce nonlinearity of an amplifier circuit(s).

FIG. 2A is a schematic diagram of an exemplary ET amplifier circuit 48including a signal mDPD circuit 50 provided in a signal input path 52and configured to perform mDPD on a digital baseband signal 54 to helpreduce memory nonlinearity of at least one amplifier circuit 56. Theamplifier circuit 56 receives an RF signal 58 in a carrier frequency ata signal input 60 and outputs the RF signal 58 in the carrier frequencyat a signal output 62. The RF signal 58 has an input power P_(IN) at thesignal input 60 and an output power P_(OUT) at the signal output 62.Similar to the RF signal 12 in FIGS. 1A-1E, the RF signal 58 at thesignal input 60 is confined to a time-variant input amplitude envelope64. Accordingly, the RF signal 58 at the signal output 62 is confined toa time-variant output amplitude envelope 66 that tracks the time-variantinput amplitude envelope 64.

If the amplifier circuit 56 is linear, the output power P_(OUT) would beproportionally related to the input power P_(IN) by an amplifier gain G(P_(OUT)=G×P_(IN)). However, as described earlier, the amplifier circuit56 may lose linearity when the RF signal 58 is in a higher carrierfrequency and the output power P_(OUT) increases beyond a certainthreshold. Moreover, as discussed above, nonlinearity behavior of theamplifier circuit 56 can exhibit so-called memory effect. As such, it isnecessary to perform mDPD in the signal input path 52 to help improvelinearity of the amplifier circuit 56.

The ET amplifier circuit 48 includes a digital modulator 68 configuredto modulate the digital baseband signal 54 to generate a digitalin-phase (I) signal 70I and a digital quadrature (Q) signal 70Q. Thesignal input path 52 is coupled to the signal input 60 of the amplifiercircuit 56 and configured to receive the digital I signal 70I and thedigital Q signal 70Q. The signal input path 52 may include digital gaincontrol circuitry 72 configured to adjust signal strength of the digitalI signal 70I and/or the digital Q signal 70Q. The signal mDPD circuit 50may be configured to process the digital I signal 70I and the digital Qsignal 70Q based on the GMP as defined in the equation (Eq. 2).

The signal input path 52 may include fixed delay circuitry 74 configuredto add a fixed delay to the digital I signal 70I and the digital Qsignal 70Q. The signal input path 52 includes an I signal DAC 761configured to convert the digital I signal 70I into an analog I signal781. The signal input path 52 also includes a Q signal DAC 76Qconfigured to convert the digital Q signal 70Q into an analog Q signal78Q. The signal input path 52 may include an I signal filter 801 and a Qsignal filter 80Q configured to eliminate unwanted frequency elementsfrom the analog I signal 781 and the analog Q signal 78Q, respectively.The signal input path 52 may include an I signal mixer 821 and a Qsignal mixer 82Q coupled to a local oscillator (LO) 84. The I signalmixer 821 and the Q signal mixer 82Q may be configured to upshift theanalog I signal 781 and the analog Q signal 78Q from an intermediatefrequency (IF) to the carrier frequency based on an oscillationfrequency generated by the LO 84. The signal input path 52 includes asignal combiner 86 configured to combine the analog I signal 781 and theanalog Q signal 78Q to generate the RF signal 58. The signal combiner 86provides the RF signal 58 to the signal input 60 of the amplifiercircuit 56.

The signal output 62 of the amplifier circuit 56 may be coupled to RFfront-end circuitry 88 that includes transmit filter circuitry 90 and anantenna(s) 92. When looking from the signal output 62 into the RFfront-end circuitry 88, the RF front-end circuitry 88 presentsfrequency-dependent impedance Z_(c) that may changes based on thecarrier frequency of the RF signal 58.

The ET amplifier circuit 48 includes ET tracker circuitry 94 having aninput node 96 and an output node 98. The ET tracker circuitry 94includes at least one ET tracker 100 coupled between the input node 96and the output node 98. The ET tracker 100 is configured to receive anET modulated target voltage signal 102, which represents an ET modulatedtarget voltage V_(TARGET), at the input node 96 and generate an ETmodulated voltage V_(CC) at the output node 98. The ET modulated targetvoltage signal 102 is defined by a time-variant target voltage envelope104 that tracks the time-variant input amplitude envelope 64 of the RFsignal 58. In this regard, the time-variant target voltage envelope 104is modified according to the RF signal 58 to create the ET modulatedtarget voltage V_(TARGET). The ET modulated voltage V_(CC) is defined bya time-variant voltage envelope 106 that tracks the time-variant targetvoltage envelope 104.

The output node 98 is coupled to the amplifier circuit 56 to provide theET modulated voltage V_(CC) as a supply voltage to the amplifier circuit56. The ET tracker circuitry 94 may also include switcher circuitry 108,which is configured to provide an alternate current (AC) current I_(AC)to the output node 98.

The ET amplifier circuit 48 includes a voltage input path 110. Thevoltage input path 110 is coupled between a mixer 112 and the input node96 of the ET tracker circuitry 94. The mixer 112 is coupled to anamplitude calculator 114 configured to calculate a time-variantamplitude of the digital baseband signal 54. The mixer 112 combines thetime-variant amplitude(s) of the digital baseband signal 54 with adigital target voltage signal 116 such that the digital target voltagesignal 116 would have the time-variant target voltage envelope 104 thattracks the time-variant input amplitude envelope 64. The voltage inputpath 110 may include fine delay circuitry 118 configured to add a delayto the digital target voltage signal 116. The voltage input path 110includes a DAC 120 coupled to the input node 96 of the ET trackercircuitry 94. The DAC 120 is configured to convert the digital targetvoltage signal 116 into the ET modulated target voltage signal 102.

The ET tracker circuitry 94 includes inherently output impedanceZ_(OUT), which can be modeled as being primarily determined by an outputinductance I_(ZOUT), as shown in FIG. 2B. FIG. 2B is a schematic diagramshowing that the output impedance Z_(OUT) of the ET tracker circuitry 94of FIG. 2A can be modeled by the output inductance L_(ZOUT). Commonelements between FIGS. 2A and 2B are shown therein with common elementnumbers and will not be re-described herein.

Impact of the output inductance L_(ZOUT) on the ET modulated outputvoltage V_(CC) can be expressed in the equation (Eq. 3) below.V _(CC) =V _(TARGET) −L _(ZOUT) ·dI _(AC) /dt  (Eq. 3)

As shown in equation (Eq. 3) above, the output inductance L_(ZOUT) cancause a voltage deviation between the ET modulated target voltageV_(TARGET) and the ET modulated voltage V_(CC). Notably, the voltagedeviation can be worsened when the RF signal 58 is encoded with a highernumber of RBs and transmitted at a higher RF frequency. As a result, thetime-variant voltage envelope 106 may deviate from the time-varianttarget voltage envelope 104. Given that the ET tracker 100 in the ETtracker circuitry 94 is provided as an amplifier configured to operatein a compression region (e.g., the nonlinearity region 32 of FIG. 1C),each dB deviation in the ET modulated voltage V_(CC) can cause a dB ofpower gain error in the time-variant output amplitude envelope 66 of theRF signal 58. As such, it may be desired to improve linearity of the ETtracker 100 to help minimize the voltage deviation in the ET modulatedvoltage V_(CC).

In this regard, FIG. 3 is a schematic diagram of an exemplary ETamplifier circuit 48A including the ET amplifier circuit 48 of FIG. 2Aand a voltage mDPD circuit 122 configured to minimize the voltagedeviation in the ET modulated voltage V_(CC). Notably, the voltage mDPDcircuit 122 is added to the ET amplifier circuit 48 of FIG. 2A tomaximize component reuse and minimize design changes. As a result, theET amplifier circuit 48A includes many identical components and/orcircuitries as provided in the ET amplifier circuit 48. As such, commonelements between FIGS. 3 and 2A can be shown with common element numbersand thus will not be re-described herein.

As is described in detail below, the voltage mDPD circuit 122 isconfigured to determine a voltage deviation of the ET modulated voltageV_(CC) relative to the ET modulated target voltage signal 102, whichrepresents the ET modulated target voltage V_(TARGET). The voltage mDPDcircuit 122 executes an mDPD polynomial, such as the GMP as shown inequation (Eq. 2), in one or more iterations. Each of the iterationsselectively extracts at least one mDPD coefficient. Accordingly, thevoltage mDPD circuit 122 adjusts the time-variant target voltageenvelope 104 based on the mDPD coefficient extracted in each of theiterations to reduce the voltage deviation to a predefined threshold. Aswill be further illustrated in FIGS. 5A-5C, the voltage mDPD circuit 122can significantly reduce the voltage deviation between the ET modulatedvoltage V_(CC) and the ET modulated target voltage V_(TARGET). As aresult, it is possible to ensure that the amplifier circuit 56 operateswith desired linearity and efficiency in support of high ET bandwidthmodulations (e.g., >250 MHz).

The voltage mDPD circuit 122 includes an analog-to-digital converter(ADC) 124 coupled to the ET tracker circuitry 94. The voltage mDPDcircuit 122 includes digital mDPD processor circuitry 126 coupled to theADC 124. The voltage mDPD circuit 122 also includes digital voltageadjustment circuitry 128 coupled to the digital mDPD processor circuitry126.

The ADC 124 is configured to receive an analog voltage feedback signal130 indicative of the ET modulated voltage V_(CC) in a defined timeinterval. In a non-limiting example, the defined time interval can be atimeslot duration or a frame duration of the RF signal 58. The ADC 124may receive the analog voltage feedback signal 130 from the output node98 of the ET tracker circuitry 94 or via circuitry coupled to the outputnode 98 of the ET tracker circuitry 94. The analog voltage feedbacksignal 130 may be scaled up or down from the ET modulated voltage V_(CC)based on a predetermined scale factor. The analog voltage feedbacksignal 130 may be provided to a high-pass filter, which is configured toretain only high-frequency content of the analog voltage feedback signal130, prior to being received by the ADC 124. Alternatively, the analogfeedback signal 130 may be provided to a low-pass filter, which isconfigured to retain only low-frequency content of the analog voltagefeedback signal 130, prior to being received by the ADC 124. The ADC 124is configured to convert the analog voltage feedback signal 130 to adigital voltage feedback signal 132 and provide the digital voltagefeedback signal 132 to the digital mDPD processor circuitry 126.

The digital mDPD processor circuitry 126 may be provided as amicroprocessor, a digital signal processor (DSP), or a fieldprogrammable gate array (FPGA). The digital mDPD processor circuitry 126is configured to determine a voltage deviation between the ET modulatedvoltage in the defined time interval and the ET modulated target voltagesignal 102. The digital mDPD processor circuitry 126 may determine thevoltage deviation by comparing the digital voltage feedback signal 132to the ET modulated target voltage signal 102 in the defined timeinterval. The digital mDPD processor circuitry 126 compares thedetermined voltage against the predefined threshold. If the determinedvoltage deviation is less than or equal to the predefined threshold, itis an indication that the mDPD polynomial has a convergence and,therefore, the digital mDPD processor circuitry 126 no longer needs toexecute the mDPD polynomial. In contrast, if the determined voltagedeviation is greater than the predefined threshold, the digital mDPDprocessor circuitry 126 executes the mDPD polynomial to extract an mDPDcoefficient(s) and provides the mDPD coefficient(s) extracted from themDPD polynomial to the digital voltage adjustment circuitry 128.

The digital voltage adjustment circuitry 128 generates a digital ETmodulated target voltage signal 134 based on the mDPD coefficient(s)received from the digital mDPD processor circuitry 126. The digital ETmodulated target voltage signal 134 includes the time-variant targetvoltage envelope 104 that is adjusted based on the mDPD coefficient(s).The digital voltage adjustment circuitry 128 provides the digital ETmodulated target voltage signal 134 to the fine delay circuitry 118 andsubsequently to the DAC 120. The DAC 120 is configured to convert thedigital ET modulated target voltage signal 134 into the ET modulatedtarget voltage signal 102 and provide the ET modulated target voltagesignal 102 to the input node 96 of the ET tracker circuitry 94.

The voltage mDPD circuit 122 can be configured to minimize the voltagedeviation based on a process. In this regard, FIG. 4 is a flowchart ofan exemplary process 136 that can be employed by the voltage mDPDcircuit 122 of FIG. 3 to minimize the voltage deviation in the ETmodulated voltage V_(CC).

In each of the iterations, the ADC 124 receives the analog voltagefeedback signal 130 indicative of the ET modulated voltage V_(CC) in thedefined time interval from the ET tracker circuitry 94 (block 138). TheADC 124 then converts the analog voltage feedback signal 130 to thedigital voltage feedback signal 132 indicative of the ET modulatedvoltage V_(CC) in the defined time interval (block 140). In the sameiteration, the digital mDPD processor circuitry 126 determines thevoltage deviation of the ET modulated voltage V_(CC) in the defined timeinterval relative to the ET modulated target voltage signal 102 (block142). The digital mDPD processor circuitry 126 then determines whetherthe voltage deviation is less than or equal to the predefined threshold(block 144). If the voltage deviation is less than or equal to thepredefined threshold, the digital mDPD processor circuitry 126 exits theiteration and the process 136 ends accordingly. Otherwise, the digitalmDPD processor circuitry 126 executes the mDPD polynomial to extract themDPD coefficient(s) (block 146). In the same iteration, the digitalvoltage adjustment circuitry 128 generates the digital ET modulatedtarget voltage signal 134 including the time-variant target voltageenvelope 104 that is adjusted based on the mDPD coefficient(s) (block148). In the same iteration, the DAC 120 converts the digital ETmodulated target voltage signal 134 into the ET modulated target voltagesignal 102 (block 150). The DAC 120 subsequently provides the ETmodulated target voltage signal 102 to the ET tracker circuitry 94(block 152). At this point, the voltage mDPD circuit 122 has completedthe iteration and returns to block 138 to start a new iteration.

Notably, the voltage mDPD circuit 122 is better suited for correctingthe voltage deviation that causes a power gain error in the amplifiercircuit 56. In contrast, the signal mDPD circuit 50 is better suited forcorrecting phase error in the RF signal 58. As such, the ET amplifiercircuit 48A of FIG. 3 can be configured to include only the voltage mDPDcircuit 122, or only the signal mDPD circuit 50, or a combination of thevoltage mDPD circuit 122 and the signal mDPD circuit 50 based onintended functionalities and design capabilities of the ET amplifiercircuit 48A. In one non-limiting example, it is possible to predeterminethe functionalities and/or capabilities (e.g., during design phase) ofthe ET amplifier circuit 48A and configure the voltage mDPD circuit 122and/or the signal mDPD circuit 50 according to a predefined staticconfiguration. In another non-limiting example, it is also possible todetermine the functionalities and/or capabilities of the ET amplifiercircuit 48A dynamically. Accordingly, it is possible to enable thevoltage mDPD circuit 122 and/or the signal mDPD circuit 50 dynamically.Table 1 below provides an exemplary summary of system parameter that canhelp determine how to configure the ET amplifier circuit 48A.

TABLE 1 Voltage mDPD Circuit Voltage mDPD Circuit (122) Not Included(122) Included Signal mDPD RF signal (58) includes RF signal (58)includes Circuit (50) less than 100 RBs more than 300 RBs Not IncludedPhase variation of the RF signal (58) less than 3° frequency-dependentimpedance (Z_(C)) varies less than 20% relative to carrier frequency ofthe RF signal (58) RF signal (58) is a Wi- Fi signal transmitted in 80GHz frequency spectrum Signal mDPD RF signal (58) includes RF signal(58) includes Circuit (50) 200-300 RBs more than RBs Included Phasevariation of the Phase variation of the RF signal (58) more RF signal(58) more than 3° than 3° frequency-dependent frequency-dependentimpedance (Z_(C)) varies impedance (Z_(C)) varies more than 20% relativemore than 20% relative to carrier frequency of to carrier frequency ofthe RF signal (58) the RF signal (58)

FIGS. 5A-5C are graphs providing exemplary illustrations of performanceimprovements of the ET amplifier circuit 48A of FIG. 3 as a result ofreducing the voltage deviation in the ET modulated voltage V_(CC).

FIG. 5A includes a first voltage curve 154, a second voltage curve 156,and a third voltage curve 158. The first voltage curve 154 representsthe ET modulated target voltage V_(TARGET), the second voltage curve 156represents the ET modulated voltage V_(CC) without the voltage mDPDcircuit 122, and the third voltage curve 158 represents the ET modulatedvoltage V_(CC) with the voltage mDPD circuit 122. As shown in FIG. 5A,when the voltage mDPD circuit 122 is provided in the ET amplifiercircuit 48A, the ET modulated voltage V_(CC) tracks more closely withthe ET modulated target voltage V_(TARGET), which is an indication ofreduced voltage deviation.

FIG. 5B includes a first voltage deviation distribution band 160 and asecond voltage deviation distribution band 162. The first voltagedeviation distribution band 160 illustrates voltage deviationdistribution over time without the voltage mDPD circuit 122, while thesecond voltage deviation distribution band 162 illustrates voltagedeviation distribution over time with the voltage mDPD circuit 122. Asshown in FIG. 5B, the second voltage deviation distribution band 162 isnarrower and more flattened than the first voltage deviationdistribution band 160. This is an indication that the voltage mDPDcircuit 122 can reduce the voltage deviation of the ET modulated voltageV_(CC).

FIG. 5C illustrates RF spectrum improvements as a result of employingthe voltage mDPD circuit 122 in the ET amplifier circuit 48A. FIG. 5Cincludes a first adjacent channel leakage ratio (ACLR) mask 164 and asecond ACLR mask 166. The first ACLR mask 164 indicates ACLR of the RFsignal 58 without the voltage mDPD circuit 122 and the second ACLR mask166 indicates ACLR of the RF signal 58 with the voltage mDPD circuit122. As shown in FIG. 5C, the ACLR of the RF signal 58 with the voltagemDPD circuit 122 is significantly lower than the ACLR without thevoltage mDPD circuit 122.

Those skilled in the art will recognize improvements and modificationsto the embodiments of the present disclosure. All such improvements andmodifications are considered within the scope of the concepts disclosedherein and the claims that follow.

What is claimed is:
 1. An envelope tracking (ET) amplifier circuitcomprising: at least one amplifier circuit configured to amplify a radiofrequency (RF) signal based on an ET modulated voltage; ET trackercircuitry configured to receive an ET modulated target voltage signalcomprising a time-variant target voltage envelope and generate the ETmodulated voltage comprising a time-variant voltage envelope trackingthe time-variant target voltage envelope; and a voltage input pathconfigured to provide the ET modulated target voltage signal to the ETtracker circuitry, the voltage input path comprises a voltage memorydigital pre-distortion (mDPD) circuit configured to: determine a voltagedeviation of the ET modulated voltage relative to the ET modulatedtarget voltage signal; execute an mDPD polynomial in one or moreiterations, each selectively configured to extract at least one mDPDcoefficient; and adjust the time-variant target voltage envelope basedon the at least one mDPD coefficient extracted in each of the one ormore iterations to reduce the voltage deviation to a predefinedthreshold.
 2. The ET amplifier circuit of claim 1 wherein the voltagemDPD circuit comprises: an analog-to-digital converter (ADC) coupled tothe ET tracker circuitry; digital mDPD processor circuitry coupled tothe ADC; and digital voltage adjustment circuitry coupled to the digitalmDPD processor circuitry.
 3. The ET amplifier circuit of claim 2 whereinin each of the one or more iterations, the ADC is configured to: receivean analog voltage feedback signal indicative of the ET modulated voltagein a defined time interval; convert the analog voltage feedback signalto a digital voltage feedback signal indicative of the ET modulatedvoltage in the defined time interval; and provide the digital voltagefeedback signal to the digital mDPD processor circuitry.
 4. The ETamplifier circuit of claim 3 wherein the ADC is further configured toreceive the analog voltage feedback signal indicative of the ETmodulated voltage in each timeslot duration of the RF signal.
 5. The ETamplifier circuit of claim 3 wherein the ADC is further configured toreceive the analog voltage feedback signal indicative of the ETmodulated voltage in each frame duration of the RF signal.
 6. The ETamplifier circuit of claim 3 wherein in each of the one or moreiterations: the digital mDPD processor circuitry is configured to:determine the voltage deviation of the ET modulated voltage in thedefined time interval relative to the ET modulated target voltagesignal; execute the mDPD polynomial to extract the at least one mDPDcoefficient; and provide the at least one mDPD coefficient to thedigital voltage adjustment circuitry; and the digital voltage adjustmentcircuitry is configured to generate a digital ET modulated targetvoltage signal comprising the time-variant target voltage envelopeadjusted based on the at least one mDPD coefficient.
 7. The ET amplifiercircuit of claim 6 wherein in each of the one or more iterations, thedigital mDPD processor circuitry is further configured to compare thevoltage deviation to the predefined threshold and terminate the one ormore iterations in response to the voltage deviation being equal to orless than the predefined threshold.
 8. The ET amplifier circuit of claim6 wherein the voltage input path further comprises a digital-to-analogconverter (DAC) coupled to the digital voltage adjustment circuitry andconfigured to convert the digital ET modulated target voltage signal tothe ET modulated target voltage signal and provide the ET modulatedtarget voltage signal to the ET tracker circuitry.
 9. The ET amplifiercircuit of claim 1 wherein the voltage mDPD circuit is provided in thevoltage input path when the RF signal is determined to comprise morethan three hundred resource blocks (RBs).
 10. The ET amplifier circuitof claim 1 wherein the voltage mDPD circuit is provided in the voltageinput path when the RF signal is determined to have less than threedegrees phase variation.
 11. The ET amplifier circuit of claim 1 whereinthe voltage mDPD circuit is provided in the voltage input path when theRF signal is determined to comprise more than three hundred resourceblocks (RBs) and the RF signal is determined to have less than threedegrees phase variation.
 12. The ET amplifier circuit of claim 1wherein: the at least one amplifier circuit is further configured toreceive the RF signal in a carrier frequency at a signal input andoutput the RF signal in the carrier frequency at a signal output; thesignal output is coupled to frequency-dependent impedance varying inproportion to the carrier frequency of the RF signal; and the voltagemDPD circuit is provided in the voltage input path when thefrequency-dependent impedance coupled to the signal output varies lessthan twenty percent relative to the carrier frequency.
 13. The ETamplifier circuit of claim 1 wherein the voltage mDPD circuit isprovided in the voltage input path when the RF signal is determined tobe a Wi-Fi signal transmitted in 80 GHz frequency spectrum.
 14. The ETamplifier circuit of claim 1 further comprising a signal input pathcoupled to the at least one amplifier circuit and configured to: receivea digital in-phase (I) signal and a digital quadrature (Q) signal;convert the digital I signal and the digital Q signal to the RF signal;and provide the RF signal to the at least one amplifier circuit.
 15. TheET amplifier circuit of claim 14 wherein the signal input pathcomprises: a signal mDPD circuit configured to process the digital Isignal and the digital Q signal to suppress non-linear behavior of theat least one amplifier circuit; an I signal digital-to-analog converter(DAC) configured to convert the digital I signal into an analog Isignal; a Q signal DAC configured to convert the digital Q signal intoan analog Q signal; and a signal combiner configured to: combine theanalog I signal and the analog Q signal to generate the RF signal; andprovide the RF signal to the at least one amplifier circuit.
 16. The ETamplifier circuit of claim 15 wherein the signal mDPD circuit isprovided in the signal input path when the RF signal is determined tocomprise more than three hundred resource blocks (RBs).
 17. The ETamplifier circuit of claim 15 wherein the signal mDPD circuit isprovided in the signal input path when the RF signal is determined tohave more than three degrees phase variation.
 18. The ET amplifiercircuit of claim 15 wherein the signal mDPD circuit is provided in thesignal input path when the RF signal comprises more than three hundredresource blocks (RBs) and the RF signal has more than three degreesphase variation.
 19. A method for performing voltage memory digitalpre-distortion (mDPD) in an envelope tracking (ET) amplifier circuitcomprising: determining a voltage deviation of an ET modulated voltagerelative to an ET modulated target voltage signal, wherein the ETmodulated target voltage signal comprises a time-variant target voltageenvelope and the ET modulated voltage comprises a time-variant voltageenvelope tracking the time-variant target voltage envelope; executing anmDPD polynomial in one or more iterations, each selectively configuredto extract at least one mDPD coefficient; and adjusting the time-varianttarget voltage envelope based on the at least one mDPD coefficientextracted in each of the one or more iterations to reduce the voltagedeviation to a predefined threshold.
 20. The method of claim 19 furthercomprising in each of the one or more iterations: receiving an analogvoltage feedback signal indicative of the ET modulated voltage in adefined time interval; converting the analog voltage feedback signal toa digital voltage feedback signal indicative of the ET modulated voltagein the defined time interval; determining the voltage deviation of theET modulated voltage in the defined time interval relative to the ETmodulated target voltage signal; executing the mDPD polynomial toextract the at least one mDPD coefficient; generating a digital ETmodulated target voltage signal having the time-variant target voltageenvelope adjusted based on the at least one mDPD coefficient; andconverting the digital ET modulated target voltage signal to the ETmodulated target voltage signal.
 21. The method of claim 20 furthercomprising: comparing the voltage deviation to the predefined thresholdin each of the one or more iterations; and terminating the one or moreiterations in response to the voltage deviation being equal to or lessthan the predefined threshold.